Volume 116, Number 2, October 2016
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 November 2016|
Orientation control of the orbital ordering plane in epitaxial LaMnO3 thin films by misfit strain
1 Department of Physics, KAIST - 34141, Daejeon, Republic of Korea
2 Pohang Accelerator Laboratory, POSTECH - 37673, Gyeongbuk, Republic of Korea
3 KAIST Institute for the NanoCentury, KAIST - 34141, Daejeon, Republic of Korea
Received: 17 August 2016
Accepted: 8 November 2016
We investigate the effects of misfit strain on the orbital order of epitaxial lanthanum manganite thin films grown on (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) and GdScO3 (GSO) substrates. Resonant X-ray scattering near the Mn K-edge is employed to identify the cooperative Jahn-Teller distortion at room temperature and determine the orientation of the orbital-ordered plane (OOP). We find that coherent growth on LSAT (GSO) makes the OOPs be vertical (parallel) to the film surface. This finding not only offers useful insight into the interplay between misfit strain and orbital order, but also holds promise for strain control of orbital-dependent physical properties.
PACS: 75.25.Dk – Orbital, charge, and other orders, including coupling of these orders / 75.47.Lx – Magnetic oxides / 61.05.cf – X-ray scattering (including small-angle scattering)
© EPLA, 2016
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