Volume 116, Number 3, November 2016
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||22 December 2016|
Band alignment at the interface of PbTe/SnTe heterojunction determined by X-ray photoelectron spectroscopy
1 Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University Hangzhou 310027, China
2 Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences - Shanghai 200083, China
3 Advanced Solar Power Inc. - Hangzhou 310018, China
Received: 26 September 2016
Accepted: 5 December 2016
We report the determination of band alignment of PbTe/SnTe (111) heterojunction interfaces using X-ray photoelectron spectroscopy (XPS). Multiple core levels of Pb and Sn were utilized to determine the valence band offset (VBO) of the heterojunction. The XPS result shows a type-III band alignment with the VBO of and the conduction band offset (CBO) of . The experimental determination of the band alignment of the PbTe/SnTe heterojunction shall benefit the improvement of PbTe/SnTe-related optoelectronic and electronic devices.
PACS: 73.20.-r – Electron states at surfaces and interfaces / 73.40.-c – Electronic transport in interface structures
© EPLA, 2016
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