Volume 116, Number 5, December 2016
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||20 January 2017|
Experimental determination of the bulk Rashba parameters in BiTeBr
1 Ramapo College of New Jersey - Mahwah, NJ, 07430, USA
2 National High Magnetic Field Laboratory - Tallahassee, FL, 32310, USA
3 Department of Physics, University of Florida - Gainesville, FL, 32611, USA
4 Crystal Growth Facility, Ecole Polytechnqiue Federale de Lausanne - CH-1015 Lausanne, Switzerland
Received: 19 October 2016
Accepted: 4 January 2017
Shubnikov-de Haas (SdH) oscillations, Hall effect, and optical reflectance measurements have been performed on single crystals of BiTeBr. Under magnetic fields up to 32 tesla and at temperatures as low as 0.4 K, the SdH data shows a single oscillation frequency . The combined transport and optical studies establish that the SdH effect originates from the Rashba spin-split bulk conduction band, with the chemical potential situated about 13 meV below the crossing (Dirac) point. The bulk carrier concentration was and the effective mass . Combining SdH and optical data, we reliably determine the Rashba parameters for the bulk conduction band of BiTeBr: the Rashba energy and the momentum spin-split . Hence, the bulk Rashba coupling strength is found to be 1.7 eVÅ.
PACS: 78.40.Fy – Semiconductors / 78.30.-j – Infrared and Raman spectra / 78.20.-e – Optical properties of bulk materials and thin films
© EPLA, 2016
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