Volume 118, Number 3, May 2017
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||03 July 2017|
Bulk-sensitive Mo 4d electronic structure of Sr2FeMoO6 probed by high-energy Mo L3 resonant photoemission
1 Departamento de Física, Universidade Federal do Paraná - Caixa Postal 19044, 81531-980 Curitiba-PR, Brazil
2 Departamento de Física, Universidad Nacional del Sur - Av. Leandro N. Alem 1253, 8000 Bahía Blanca, Argentina
3 Centro Atómico Bariloche, Comisión Nacional de Energía Atómica - Av. Ezequiel Bustillo 9500, 8400 Bariloche, Argentina
4 Laboratório Nacional de Luz Síncrotron, CNPEM - Caixa Postal 6192, 13083-970 Campinas-SP, Brazil
Received: 27 January 2017
Accepted: 12 June 2017
We studied the Mo 4d electronic structure of Sr2FeMoO6 using high-energy Mo L3 resonant photoemission. The experimental spectra are in good agreement with modified Becke-Johnson (mBJ) band structure calculations. The energy dependence of the spectra can be explained by the changes in the photoemission cross-sections. The Mo L3 resonant spectrum shows Mo 4d character below the Fermi level and mixed Mo 4d-O 2p character around 8.0 eV. The Mo 4d weight in the resonant spectrum is in good agreement with the calculated interference between the direct and decay terms. The high photon energy used in this study (about 2520 eV) provides a bulk-sensitive determination of the Mo 4d electronic structure.
PACS: 79.60.Bm – Clean metal, semiconductor, and insulator surfaces / 71.20.Ps – Other inorganic compounds / 71.70.-d – Level splitting and interactions
© EPLA, 2017
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