Volume 118, Number 5, June 2017
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||08 August 2017|
Enhanced superconductivity in ThNiAsN
1 Department of Physics and State Key Lab of Silicon Materials, Zhejiang University - Hangzhou 310027, China
2 Department of Physics, Shandong University of Technology - Zibo 255049, China
3 Collaborative Innovation Centre of Advanced Microstructures - Nanjing 210093, China
Received: 10 May 2017
Accepted: 19 July 2017
We report the synthesis and physical properties of a nickel-based arsenide ThNiAsN. The new compound crystallizes in a ZrCuSiAs-type structure (space group ) with lattice parameters and . Bulk superconductivity at is demonstrated by the measurements of electrical resistivity, dc magnetic susceptibility, and heat capacity. The upper critical field at zero temperature, , and the specific-heat jump at Tc are 6.1 T and , respectively. These two physical quantities, together with the Tc value, are the highest among the Ni-based ZrCuSiAs-type materials. We discuss this enhanced superconductivity in terms of the internal chemical pressure in ThNiAsN.
PACS: 74.70.Xa – Pnictides and chalcogenides / 74.62.Bf – Effects of material synthesis, crystal structure, and chemical composition / 74.25.-q – Properties of superconductors
© EPLA, 2017
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.