| Issue |
EPL
Volume 118, Number 5, June 2017
|
|
|---|---|---|
| Article Number | 57004 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/118/57004 | |
| Published online | 08 August 2017 | |
Enhanced superconductivity in ThNiAsN
1 Department of Physics and State Key Lab of Silicon Materials, Zhejiang University - Hangzhou 310027, China
2 Department of Physics, Shandong University of Technology - Zibo 255049, China
3 Collaborative Innovation Centre of Advanced Microstructures - Nanjing 210093, China
(a) ghcao@zju.edu.cn
Received: 10 May 2017
Accepted: 19 July 2017
We report the synthesis and physical properties of a nickel-based arsenide ThNiAsN. The new compound crystallizes in a ZrCuSiAs-type structure (space group 
) with lattice parameters 
and 
. Bulk superconductivity at 
is demonstrated by the measurements of electrical resistivity, dc magnetic susceptibility, and heat capacity. The upper critical field at zero temperature, 
, and the specific-heat jump at Tc are 6.1 T and 
, respectively. These two physical quantities, together with the Tc value, are the highest among the Ni-based ZrCuSiAs-type materials. We discuss this enhanced superconductivity in terms of the internal chemical pressure in ThNiAsN.
PACS: 74.70.Xa – Pnictides and chalcogenides / 74.62.Bf – Effects of material synthesis, crystal structure, and chemical composition / 74.25.-q – Properties of superconductors
© EPLA, 2017
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