Volume 119, Number 2, July 2017
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||29 September 2017|
The effect of γ-rays irradiation on the electrical properties of WOx film-based memory cells
School of Materials Science and Engineering, Xiangtan University - Xiangtan 411105, Hunan, China, National-Provincial Laboratory of Special Function Thin Film Materials, Xiangtan University Hunan Xiangtan 411105, China and Key Laboratory of Low-dimensional Materials and Application Technology, Xiangtan University Hunan Xiangtan 411105, China
(a) email@example.com (corresponding author)
Received: 1 August 2017
Accepted: 7 September 2017
Resistive random access memory (RRAM) is recognized as a promising candidate for the next generation of non-volatile memory devices. In this work, the effect of γ-rays irradiation on WOx-based RRAM devices is investigated. The basic device parameters including high resistance, low resistance, set voltage, and reset voltage show high uniformity with a total dose as high as 500 krad(Si). Furthermore, the retention of 104 s can be achieved after irradiation, and the static resistances are also tested and compared. The highly uniformity after γ-rays irradiation provides the WOx-based RRAM devices with great potential for applications.
PACS: 73.50.-h – Electronic transport phenomena in thin films / 29.25.Rm – Sources of radioactive nuclei / 73.61.Ga – II-VI semiconductors
© EPLA, 2017
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