The effect of γ-rays irradiation on the electrical properties of WO_x film-based memory cells

School of Materials Science and Engineering, Xiangtan University - Xiangtan 411105, Hunan, China, National-Provincial Laboratory of Special Function Thin Film Materials, Xiangtan University Hunan Xiangtan 411105, China and Key Laboratory of Low-dimensional Materials and Application Technology, Xiangtan University Hunan Xiangtan 411105, China

^(a) jbwang@xtu.edu.cn (corresponding author)

Received: 1 August 2017
Accepted: 7 September 2017

Abstract

Resistive random access memory (RRAM) is recognized as a promising candidate for the next generation of non-volatile memory devices. In this work, the effect of γ-rays irradiation on WO_x-based RRAM devices is investigated. The basic device parameters including high resistance, low resistance, set voltage, and reset voltage show high uniformity with a total dose as high as 500 krad(Si). Furthermore, the retention of 10⁴ s can be achieved after irradiation, and the static resistances are also tested and compared. The highly uniformity after γ-rays irradiation provides the WO_x-based RRAM devices with great potential for applications.