| Issue |
EPL
Volume 119, Number 4, August 2017
|
|
|---|---|---|
| Article Number | 47001 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/119/47001 | |
| Published online | 26 October 2017 | |
Effects of impurity adsorption on topological surface states of Bi2Te3
1 Department of Chemistry, Pohang University of Science and Technology - Pohang 790-784, Korea
2 Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) - Ulsan 689-798, Korea
3 Electronic and Magnetic Materials Group, Physics Division, PINSTECH - P.O. Nilore, Islamabad, Pakistan
4 Department of Physics and Divisions of Advanced Nuclear Engineering, Pohang University of Science and Technology - Pohang 790-784, Korea
5 Diamond Light Source Ltd. Harwell Science and Innovation Campus - Didcot, Oxfordshire OX11 0DE, UK
Received: 5 May 2017
Accepted: 26 September 2017
Electronic structures of Bi2Te3 with adsorption of Rb, In, Ga and Au atoms are studied by using the first-principle method, focusing on the effect of non-magnetic impurities on the topologically protected surface states. Upon monolayer formation, the bulk conduction band is moved down to the Fermi level with a significant Rashba splitting due to n-doping behavior with band modification details depending on the adatom chemistry. Our study shows the robustness of the intrinsic spin-momentum coupled surface band and emergence of a new similar one, which could provide helpful insight for developing novel spintronic devices.
PACS: 73.20.At – Surface states, band structure, electron density of states / 73.20.Hb – Impurity and defect levels; energy states of adsorbed species / 72.20.Dp – General theory, scattering mechanisms
© EPLA, 2017
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