Volume 120, Number 2, October 2017
|Number of page(s)||4|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||17 January 2018|
p-n junction theory in view of excess majority carriers
School of Physical Science and Technology, Lanzhou University - Lanzhou, Gansu 730000, China
Received: 31 August 2017
Accepted: 18 December 2017
The classical junction theory is reconstructed in view of “excess majority carriers”. The effects of excess majority carriers, in addition to the excess minority carriers, are described analytically and integrated into the theory. The quantity and distribution of excess majority carriers are presented, which give rise to an “accompanying electric field” and guarantee the space-charge neutrality of each side of the junction. The accompanying electric field is figured out analytically, and the contributions of majority carriers are clarified quantitatively, which enables the current continuity in either side of the junction. Furthermore, at any position in the quasi-neutral region, the various current components are solved in closed form and the net current is obtained in a straightforward way. The reconstructed theory provides a more thorough understanding of junction operation with physical conciseness.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 72.10.Bg – General formulation of transport theory / 85.30.Kk – Junction diodes
© EPLA, 2018
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