Volume 122, Number 2, April 2018
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||11 June 2018|
The p-n junction formation effect of an Ar+ ion beam on the n-GaAs surface
1 Ioffe Institute - 19402 Saint-Petersburg, Russia
2 Helmgoltz-Zentrum BESSY II, German-Russian Laboratory - D-12489 Berlin, Germany
3 Saint-Petersburg University - 199034 Saint-Petersburg, Russia
Received: 18 November 2017
Accepted: 22 May 2018
The electronic structure of the well-defined n-GaAs (100) near-surface layer irradiated by an ion beam of the keV energy range has been studied by synchrotron-based photoelectron spectroscopy. Conversion of the conductivity type from n into p has been revealed in the irradiated layer several nm thick, thus resulting in the junction formation. The effect manifests itself in adjoining the valence band edge to the Fermi level. Transformation of the conductivity type has been shown to be caused by Ga-antisite point defects generated by mechanical impact of inert argon atoms diffusing away after implantation. The possibility of local formation of a nanojunction by ion beam within the beam spot has been demonstrated.
PACS: 79.20.Rf – Atomic, molecular, and ion beam impact and interactions with surfaces / 73.40.Kp – III-V semiconductor-to-semiconductor contacts, / 79.60.-i – Photoemission and photoelectron spectra
© EPLA, 2018
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