Volume 122, Number 2, April 2018
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||18 June 2018|
Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films: Structural stability and related electrical transport properties
1 Department of Physics, Indian Institute of Science - Bangalore 560012, India
2 EMAT, University of Antwerp - Groenenborgerlaan 171, 2020 Antwerp, Belgium
3 Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science - Bangalore 560012, India
4 Institute of Physics, Sachivalaya Marg - Bhubaneswar 751005, India
5 Homi Bhabha National Institute - Anushakti Nagar, Mumbai 400085, India
Received: 25 February 2018
Accepted: 28 May 2018
Metastable orthorhombic SrIrO3 (SIO) is an arch-type spin-orbit coupled material. We demonstrate here a controlled growth of relatively thick (200 nm) SIO films that transform from bulk “6H-type” structure with monoclinic distortion to an orthorhombic lattice by controlling growth temperature. Extensive studies based on high-resolution X-ray diffraction and transmission electron microscopy infer a two distinct structural phases of SIO. Electrical transport reveals a weak temperature-dependent semi-metallic character for both phases. However, the temperature-dependent Hall-coefficient for the orthorhombic SIO exhibits a prominent sign change, suggesting a multiband character in the vicinity of EF. Our findings thus unravel the subtle structure-property relation in SIO epitaxial thin films.
PACS: 81.15.-z – Methods of deposition of films and coatings; film growth and epitaxy / 68.37.Ma – Scanning transmission electron microscopy (STEM) / 73.50.-h – Electronic transport phenomena in thin films
© EPLA, 2018
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