| Issue |
EPL
Volume 122, Number 4, May 2018
|
|
|---|---|---|
| Article Number | 47002 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/122/47002 | |
| Published online | 27 June 2018 | |
Atomically thin mononitrides SiN and GeN: New two-dimensional wide band gap semiconductors
Department of Applied Physics, Nanjing University of Science and Technology - Nanjing 210094, China
(a) qianyan@njust.edu.cn (corresponding author)
(b) mrhpwu@njust.edu.cn (corresponding author)
Received: 12 March 2018
Accepted: 7 June 2018
To match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry, low-dimensional Si-based semiconductors maybe are the best candidates. Owing to the lack of such materials, in this work, we predicted two-dimensional atomically thin mononitrides SiN and GeN via a swarm structure search method and density functional theory. By the employment of HSE functional, both SiN and GeN are calculated as indirect wide band gap semiconductors with the gaps of 
and 
, respectively. Ab initio molecular-dynamics calculation displays that both mononitrides can exist stably even at an extremely high temperature of 
. Notably, phonon limited electron mobilities are evaluated as 
and 
for SiN and GeN, respectively. We hope this work could expand the family of low-dimensional Si-based and wide band gap semiconductors.
PACS: 71.20.Nr – Semiconductor compounds / 61.46.-w – Structure of nanoscale materials / 73.22.-f – Electronic structure of nanoscale materials and related systems
© EPLA, 2018
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