Volume 124, Number 1, October 2018
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||12 November 2018|
Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr2−x SmxIrO4system
1 College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications Nanjing, Jiangsu 210023, China
2 School of Science, New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications - Nanjing, Jiangsu 210023, China
3 National Laboratory of Solid State Microstructures, Nanjing University - Nanjing 210093, China
Received: 3 June 2018
Accepted: 7 October 2018
Sr2IrO4 has been shown to host a novel Mott spin-orbit insulating state with antiferromagnetic ordering. Here, the effects of Sm substitution at Sr-site on structural, electrical and magnetic properties are studied in Sr2IrO4. Sm-doped samples still retain the insulating behavior, but with the increase of Sm-doping concentration x, the resistivity firstly decreases for and then increases. We found that the increment of the Ir-O-Ir bond angle, combined with the modulation of the regularity of IrO6 octahedra, results in the non-monotonic variation of resistivity with x. On the other hand, there are two types of magnetic exchange interactions (i.e., Ir4+-O-Ir4+ and Sm3+-O-Ir4+) in the Sm-doped Sr2−xSmxIrO4 system. The antiferromagnetic component is greatly suppressed in the low concentration x and then an ascension emerges in the high concentration x, which is attributable to the competition between the weakened Ir4+-O-Ir4+ and enhanced Sm3+-O-Ir4+ exchange interactions.
PACS: 71.27.+a – Strongly correlated electron systems; heavy fermions / 72.80.Ga – Transition-metal compounds / 74.62.Dh – Effects of crystal defects, doping and substitution
© EPLA, 2018
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