Volume 127, Number 5, September 2019
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||16 October 2019|
Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors
1 Department of Physics and Material Sciences Center, Philipps-University - D-35032 Marburg, Germany
2 Institute of Semiconductor Physics - 630090 Novosibirsk, Russia
3 Novosibirsk State University - 630090 Novosibirsk, Russia
Received: 12 July 2019
Accepted: 6 September 2019
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in the RB model is formulated using percolation arguments. Comparison with the results published so far evidences the superiority of the percolation approach.
PACS: 72.20.-i – Conductivity phenomena in semiconductors and insulators / 72.80.Ng – Disordered solids
© EPLA, 2019
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