Volume 128, Number 4, November 2019
|Number of page(s)||3|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||20 January 2020|
Giant magnetoresistance in gapless HgCdTe with Kane fermions
1 Ioffe Institute - Polytechnicheskaya 26, 194021 St. Petersburg, Russia
2 Rzhanov Institute of Semiconductor Physics - Novosibirsk, 630090, Russia
3 Institut für Festkörperphysik, Leibniz Universität Hannover - Appelstraße 2, 30167 Hannover, Germany
Received: 11 March 2019
Accepted: 22 November 2019
We report the observation of an extremely large non-saturating magnetoresistance (MR) exceeding one million per cent at a magnetic field of 11 tesla in gapless HgCdTe. The samples exhibit a maximum of MR at a temperature of corresponding to the semiconductor-semimetal transition, where a linear carrier dispersion appears. We attribute the observed giant MR to an opening of the gap due to Landau quantization of the Kane fermions strengthened by the absence of localization in such a purely gapless system at zero magnetic field.
PACS: 71.20.Nr – Semiconductor compounds / 72.80.Ey – III-V and II-VI semiconductors / 75.47.De – Giant magnetoresistance
© EPLA, 2020
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