| Issue |
EPL
Volume 129, Number 2, January 2020
|
|
|---|---|---|
| Article Number | 27001 | |
| Number of page(s) | 7 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/129/27001 | |
| Published online | 14 February 2020 | |
Time-dependent Goos-Hänchen shifts in gapped graphene
1 Laboratory of Theoretical Physics, Faculty of Sciences, Chouaïb Doukkali University - PO Box 20, 24000 El Jadida, Morocco
2 Physics Department, King Fahd University of Petroleum & Minerals - Dhahran 31261, Saudi Arabia
Received: 18 October 2019
Accepted: 3 February 2020
We study the Goos-Hänchen (GH) shifts for transmitted Dirac fermions in gapped graphene through a single barrier structure having a time periodic oscillating component. Our analysis shows that the GH shifts in transmission for central band l = 0 and two first sidebands 
change sign at the Dirac points 
. In particular the GH shifts in transmission exhibit enhanced peaks at each bound state associated with the single barrier when the incident angle is less than the critical angle associated with total reflection. The Klein tunneling, reflected by perfect transmission at normal incidence, is also preserved in the presence of an oscillating barrier.
PACS: 73.63.-b – Electronic transport in nanoscale materials and structures / 73.23.-b – Electronic transport in mesoscopic systems / 72.80.Rj – Fullerenes and related materials
© EPLA, 2020
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