Volume 130, Number 2, April 2020
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||18 May 2020|
Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing
1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China Hefei, Anhui 230026, China
2 Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences - Beijing 100029, China
3 Department of Physics and Astronomy, University of California - Los Angeles, CA 90095, USA
4 Origin Quantum Computing Company Limited - Hefei, Anhui 230026, China
Received: 14 January 2020
Accepted: 22 April 2020
To improve mobility of fabricated silicon metal-oxide–semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting the possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.
PACS: 73.63.Kv – Quantum dots / 73.63.Hs – Quantum wells
© EPLA, 2020
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