Issue |
EPL
Volume 132, Number 2, October 2020
|
|
---|---|---|
Article Number | 24004 | |
Number of page(s) | 4 | |
Section | Electromagnetism, Optics, Acoustics, Heat Transfer, Classical Mechanics, and Fluid Dynamics | |
DOI | https://doi.org/10.1209/0295-5075/132/24004 | |
Published online | 21 December 2020 |
Electro-photoluminescence study in InGaAs/AlGaAs multi-quantum-wells
1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China
2 University of Chinese Academy of Sciences - Beijing 100049, China
3 Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China
4 Songshan Lake Materials Laboratory - Dongguan, Guangdong 523808, China
5 The Yangtze River Delta Physics Research Center - Liyang, Jiangsu 213000, China
(a) duchunhua@iphy.ac.cn
(b) mbe2@iphy.ac.cn
Received: 17 July 2020
Accepted: 23 September 2020
Photoluminescence (PL) plays an important role in the study of luminescence characteristics of multi-quantum-well (MQW) structures. In this work, we study electro-photoluminescence spectra of InGaAs/AlGaAs MQWs under open-circuit, short-circuit, and forward-voltage conditions. The dependences of photocurrent and photovoltage on excitation power are discussed in this paper, which allows us to explore the carrier behavior in InGaAs/AlGaAs MQW LEDs deeply. We propose that the photovoltaic effect in open-circuit (OC) conditions should be properly considered for PL characterization and calculation of the internal quantum efficiency (IQE) as well as non-radiative recombination (NRA) efficiency in InGaAs/AlGaAs MQW LEDs.
PACS: 42.79.-e – Optical elements, devices, and systems / 42.87.-d – Optical testing techniques / 42.50.-p – Quantum optics
© 2020 EPLA
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