Volume 143, Number 1, July 2023
|Number of page(s)
|Condensed matter and materials physics
|04 July 2023
XMoSiN2 (X = S, Se, Te): A novel 2D Janus semiconductor with ultra-high carrier mobility and excellent thermoelectric performance
Department of Applied Physics, School of Physics and Electronics, Hunan University - Changsha 410082, China
Received: 28 March 2023
Accepted: 5 June 2023
Two-dimensional (2D) semiconductor is a potential candidate for thermoelectric materials due to its high Seebeck coefficient. However, its high lattice thermal conductivity limits its applications in the field of thermoelectric materials. Here, we constructed an unsymmetrical 2D Janus semiconductor XMoSiN2(X = S, Se, Te) based on to significantly reduce the lattice thermal conductivity to only one-sixth that of at 300 K. We found that XMoSiN2 had an ultra-high carrier mobility up to 4640 cm2V−1s−1 leading to a metal-like electrical conductivity. Meanwhile, XMoSiN2 reserved the high Seebeck coefficient of . The lower lattice thermal conductivity and metal-like electrical conductivity resulted in excellent thermoelectric performance. possessed a record-high ZT value of 3.57 at 900 K. We believed that other materials with a similar structure to XMoSiN2 can also be potential candidates for high-performance thermoelectric materials. Our work provides valuable insights into designing novel high-performance thermoelectric materials.
© 2023 EPLA
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