Nitrogen incorporation in compressively strained multiple quantum well lasers

Laboratory of Semiconductor Devices Physics, University of Bechar - P.O. Box 417, Bechar, 08000, Algeria

Received: 29 July 2024
Accepted: 16 December 2024

Abstract

Our work focuses on reducing the band gap energy of the Ga_xIn_1-xN_yAs_1-y alloy with a GaAs barrier through the incorporation of nitrogen, making it possible to achieve a long-wavelength emission of 1.3 . Using this model, we will study the influence of the incorporation of nitrogen on the properties of the Ga_xIn_1-xN_yAs_1-y/GaAs multiple quantum well laser which are strain, optical gain and spontaneous emission. The band anticrossing model is used to quantitatively describe the extent to which the fundamental band gap energy and effective electronic mass are affected by the incorporation of nitrogen into quaternary Ga_xIn_1-xN_yAs_1-y. Our results show that the incorporation of a small amount of nitrogen (less than 5%) into Ga_xIn_1-xAs to form Ga_xIn_1-xN_yAs_1-y alloys leads to a splitting of the conduction band into two non-parabolic subbands and a significant increase in electron effective mass. This splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction band states of Ga_xIn_1-xAs. The modification of the conduction band structure profoundly affects the properties of the Ga_xIn_1-xN_yAs_1-y alloys and subsequently the Ga_xIn_1-xN_yAs_1-y/GaAs laser structure.