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Europhys. Lett., 44 6 (1998) 707-713

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[Your name] recommends the following article:

Mössbauer study of the proximity gettering of ion-implanted impurities by B-Si precipitates in Si

W. Deweerd, G. Koops, H. Pattyn, S. M. Myers, T. L. Aselage, T. J. Headley and G. A. Petersen

Europhys. Lett., 44 6 (1998) 707-713

Published online: 01 September 2002

DOI: https://doi.org/10.1209/epl/i1998-00529-8

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