| Issue |
Europhys. Lett.
Volume 44, Number 6, December II 1998
|
|
|---|---|---|
| Page(s) | 707 - 713 | |
| Section | Atomic, molecular and optical physics | |
| DOI | https://doi.org/10.1209/epl/i1998-00529-8 | |
| Published online | 01 September 2002 | |
Mössbauer study of the proximity gettering of ion-implanted
impurities by
B-Si precipitates in Si
1
Katholieke Universiteit Leuven, Instituut voor Kern- en Stralingfysika, Celestijnenlaan 200D, B-3001 Leuven, Belgium
2
Sandia National Laboratories - Albuquerque, NM 87185-1056, USA
Received:
22
April
1998
Accepted:
26
October
1998
We have studied the gettering of ion-implanted
impurities to amorphous B-Si precipitates in B-implanted c-Si using
Mössbauer spectroscopy in conjunction with Secondary Ion Mass
Spectroscopy and Transmission Electron Microscopy. Under
high-temperature annealing, the Co atoms migrate from their
as-implanted state to a gettered state at the B-Si precipitates in the
B-implanted layer, while no association between the Co impurities and
unprecipitated B is observed. The gettered Co atoms clearly occupy a
non-metal-silicide site. The Mössbauer spectrum displays a
pronounced quadrupole splitting, closely conforming to the spectrum
observed for bulk crystalline 
implanted with Co. We
therefore tentatively argue that the gettered atoms reside at solution
sites within the precipitates and not in their periphery, in agreement
with previous indications.
PACS: 33.45.+x – Mössbauer spectra / 61.72.Yx – Interaction between different crystal defects; gettering effect
© EDP Sciences, 1998
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