Volume 44, Number 6, December II 1998
|Page(s)||707 - 713|
|Section||Atomic, molecular and optical physics|
|Published online||01 September 2002|
Mössbauer study of the proximity gettering of ion-implanted impurities by B-Si precipitates in Si
Katholieke Universiteit Leuven, Instituut voor Kern- en Stralingfysika, Celestijnenlaan 200D, B-3001 Leuven, Belgium
2 Sandia National Laboratories - Albuquerque, NM 87185-1056, USA
Accepted: 26 October 1998
We have studied the gettering of ion-implanted impurities to amorphous B-Si precipitates in B-implanted c-Si using Mössbauer spectroscopy in conjunction with Secondary Ion Mass Spectroscopy and Transmission Electron Microscopy. Under high-temperature annealing, the Co atoms migrate from their as-implanted state to a gettered state at the B-Si precipitates in the B-implanted layer, while no association between the Co impurities and unprecipitated B is observed. The gettered Co atoms clearly occupy a non-metal-silicide site. The Mössbauer spectrum displays a pronounced quadrupole splitting, closely conforming to the spectrum observed for bulk crystalline implanted with Co. We therefore tentatively argue that the gettered atoms reside at solution sites within the precipitates and not in their periphery, in agreement with previous indications.
PACS: 33.45.+x – Mössbauer spectra / 61.72.Yx – Interaction between different crystal defects; gettering effect
© EDP Sciences, 1998
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