Europhys. Lett, 44 (5), pp. 627-633 (1998)
of cubic boron
nitride thin films
A. Bonizzi 1, R. Checchetto 2, A. Miotello 2 and P. M. Ossi 3
1 Dipartimento di Ingegneria Nucleare, Politecnico di Milano - I-20133 Milano,
2 Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica
Università di Trento - I-38050 Povo (TN) Italy
3 Istituto Nazionale per la Fisica della Materia (INFM) and
Dipartimento di Ingegneria Nucleare, Politecnico di Milano - I-20133 Milano, Italy
(received 21 July 1998; accepted in final form 15 October 1998)
PACS. 64.70Kb - Solid-solid transitions.
PACS. 68.55Jk - Structure and morphology; thickness.
PACS. 81.15Cd - Deposition by sputtering.
BN thin films have been deposited on (100)-oriented Si wafers by radio frequency (RF) magnetron sputtering using r.f. target power in the range and substrate bias voltage in the range, while maintaining a low substrate temperature (). Film characterization has been performed by using Fourier Transform Infrared Spectroscopy (FTIR), Micro-Raman Spectroscopy, X-ray Diffraction (XRD) and nanoindentation measurements. With appropriate choice of the bias voltage BN films with predominant cubic phase (90 at. %) can be obtained. The deposited layers are nearly stoichiometric (the B/N atomic composition ratio is ) and present a considerable nanohardness value (); structural analysis shows grain size in the nanometric range, thus giving rise to strong phonon confinement effects.