Low-temperature deposition of cubic boron nitride thin films
Dipartimento di Ingegneria Nucleare, Politecnico di Milano - I-20133 Milano,
2 Istituto Nazionale per la Fisica della Materia (INFM ) and Dipartimento di Fisica Università di Trento - I-38050 Povo (TN ) Italy
3 Istituto Nazionale per la Fisica della Materia (INFM ) and Dipartimento di Ingegneria Nucleare, Politecnico di Milano - I-20133 Milano, Italy
Accepted: 15 October 1998
BN thin films have been deposited on (100)-oriented Si wafers by radio frequency (RF) magnetron sputtering using r.f. target power in the range and substrate bias voltage in the range, while maintaining a low substrate temperature (). Film characterization has been performed by using Fourier Transform Infrared Spectroscopy (FTIR), Micro-Raman Spectroscopy, X-ray Diffraction (XRD) and nanoindentation measurements. With appropriate choice of the bias voltage BN films with predominant cubic phase (90 at. %) can be obtained. The deposited layers are nearly stoichiometric (the B/N atomic composition ratio is ) and present a considerable nanohardness value (); structural analysis shows grain size in the nanometric range, thus giving rise to strong phonon confinement effects.
PACS: 64.70.Kb – Solid-solid transitions / 68.55.Jk – Structure and morphology; thickness / 81.15.Cd – Deposition by sputtering
© EDP Sciences, 1998