Europhys. Lett., 62 (6) , pp. 862-868 (2003)
On the solid-phase epitaxy of the - : / - interfaceA. Mattoni1 and L. Colombo1, 2
1 Istituto Nazionale per la Fisica della Materia (INFM), Unità di Ricerca di Cagliari Cittadella Universitaria - I-09042 Monserrato (CA), Italy
2 Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria I-09042 Monserrato (CA), Italy
(Received 28 November 2002; accepted in final form 24 April 2003)
By means of large-scale atomistic simulations we investigate the recrystallization features of an interface between boron-doped amorphous silicon and crystalline silicon. Present simulations are both consistent with available experimental information and predictive as far as the relevant elementary mechanisms occurring during solid-phase epitaxy. In particular, we prove that the experimentally observed solubility limit for electrically active boron is due to sizeable boron ripening phenomena, occurring in the amorphous-silicon region, as well as during recrystallization.
61.72.Tt - Doping and impurity implantation in germanium and silicon.
61.43.Dq - Amorphous semiconductors, metals, and alloys.
81.10.Jt - Growth from solid phases (including multiphase diffusion and recrystallization).
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