Europhys. Lett.
Volume 62, Number 6, June 2003
Page(s) 862 - 868
Section Condensed matter: structure, mechanical and thermal properties
Published online 01 June 2003
DOI: 10.1209/epl/i2003-00452-6
Europhys. Lett., 62 (6) , pp. 862-868 (2003)

On the solid-phase epitaxy of the $\chem{a}$- $\chem{Si}$: $\chem{B}$/ $\chem{c}$- $\chem{Si}$ interface

A. Mattoni1 and L. Colombo1, 2

1  Istituto Nazionale per la Fisica della Materia (INFM), Unità di Ricerca di Cagliari Cittadella Universitaria - I-09042 Monserrato (CA), Italy
2  Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria I-09042 Monserrato (CA), Italy

(Received 28 November 2002; accepted in final form 24 April 2003)

By means of large-scale atomistic simulations we investigate the recrystallization features of an interface between boron-doped amorphous silicon and crystalline silicon. Present simulations are both consistent with available experimental information and predictive as far as the relevant elementary mechanisms occurring during solid-phase epitaxy. In particular, we prove that the experimentally observed solubility limit for electrically active boron is due to sizeable boron ripening phenomena, occurring in the amorphous-silicon region, as well as during recrystallization.

61.72.Tt - Doping and impurity implantation in germanium and silicon.
61.43.Dq - Amorphous semiconductors, metals, and alloys.
81.10.Jt - Growth from solid phases (including multiphase diffusion and recrystallization).

© EDP Sciences 2003