Transverse "resistance overshoot" in a two-dimensional electron gas in the quantum Hall effect regimeI. Shlimak1, V. Ginodman1, A. B. Gerber2, A. Milner2, K.-J. Friedland3 and D. J. Paul4
1 Minerva Center and Jack and Pearl Resnick Institute of Advanced Technology Department of Physics, Bar-Ilan University - 52900 Ramat-Gan, Israel
2 School of Physics & Astronomy, Raymond & Beverly Sackler Faculty of Exact Sciences, Tel-Aviv University - 69978 Tel Aviv, Israel
3 Paul-Drude-Institut für Festkörperelektronik - Hausvogteiplatz 5-7 10117, Berlin, Germany
4 Cavendish Laboratory, University of Cambridge Madingley Road, Cambridge CB3 0HE, UK
received 15 October 2004; accepted in final form 31 January 2005
published online 23 February 2005
We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance Rxy in . Near the low magnetic-field end of the quantum Hall effect plateaus, when the filling factor approaches an integer i, Rxy overshoots the normal plateau value h/ie2. However, if magnetic field B increases further, Rxy decreases to its normal value. It is shown that in the investigated sample n- , overshoots exist for almost all . Existence of overshoot in Rxy observed in different materials and for different , where splitting of the adjacent Landau bands has different character, hints at the common origin of this effect. Comparison of the experimental curves for and with and without overshoot showed that this effect exists in the whole interval between plateaus, not only in the region where Rxy exceeds the normal plateau value.
73.43.-f - Quantum Hall effects.
72.20.Ee - Mobility edges; hopping transport.
© EDP Sciences 2005