Electron transport in a slot-gate Si MOSFETI. Shlimak1, V. Ginodman1, A. Butenko1, K.-J. Friedland2 and S. V. Kravchenko3
1 Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar-Ilan University Ramat-Gan 52900, Israel
2 Paul-Drude Institut für Festkörperelektronik - Hausvogteiplatz 5-7, 10117, Berlin, Germany, EU
3 Physics Department, Northeastern University - Boston, MA 02115, USA
received 16 December 2007; accepted in final form 25 March 2008; published May 2008
published online 6 May 2008
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is added to the longitudinal voltage only on one side depending on the gradient of the gate voltages and the direction of the external magnetic field. After subtracting the Hall voltage difference, the increase in longitudinal resistance is observed when electrons on the opposite sides of the slot occupy Landau levels with different spin orientations.
73.43.-f - Quantum Hall effects.
72.20.-i - Conductivity phenomena in semiconductors and insulators.
72.25.Rb - Spin relaxation and scattering.
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