Document EPL, 82 (2008) 47001
DOI: 10.1209/0295-5075/82/47001
Electron transport in a slot-gate Si MOSFET
I. Shlimak1, V. Ginodman1, A. Butenko1, K.-J. Friedland2 and S. V. Kravchenko31 Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar-Ilan University Ramat-Gan 52900, Israel
2 Paul-Drude Institut für Festkörperelektronik - Hausvogteiplatz 5-7, 10117, Berlin, Germany, EU
3 Physics Department, Northeastern University - Boston, MA 02115, USA
shlimai@mail.biu.ac.il
received 16 December 2007; accepted in final form 25 March 2008; published May 2008
published online 6 May 2008
Abstract
The transversal and longitudinal resistance in the quantum Hall effect regime
was measured in a Si MOSFET sample in which a slot-gate allows one to vary
the electron density and filling factor in different parts of the sample.
In case of unequal gate voltages, the longitudinal resistances on the opposite sides
of the sample differ from each other because the originated Hall voltage difference
is added to the longitudinal voltage only on one side depending on the gradient
of the gate voltages and the direction of the external magnetic field.
After subtracting the Hall voltage difference, the increase in longitudinal
resistance is observed when electrons on the opposite sides of the slot occupy
Landau levels with different spin orientations.
73.43.-f - Quantum Hall effects.
72.20.-i - Conductivity phenomena in semiconductors and insulators.
72.25.Rb - Spin relaxation and scattering.
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