Europhys. Lett.
Volume 70, Number 6, June 2005
Page(s) 810 - 816
Section Condensed matter: electronic structure, electrical, magnetic, and optical properties
Published online 18 May 2005
Europhys. Lett., 70 (6), pp. 810-816 (2005)
DOI: 10.1209/epl/i2005-10049-7

Lorentz-force-induced asymmetry in the Aharonov-Bohm effect in a three-terminal semiconductor quantum ring

B. Szafran1, 2 and F. M. Peeters1

1  Departement Fysica, Universiteit Antwerpen (Campus Middelheim) Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
2  Faculty of Physics and Nuclear Techniques, AGH University of Science and Technology - al. Mickiewicza 30, 30-059 Kraków, Poland

received 19 April 2005; accepted 28 April 2005
published online 18 May 2005

Based on a solution of the time-dependent Schrödinger equation, we propose an experimental setup to measure the effect of the Lorentz force in a semiconductor Aharonov-Bohm ring connected to one input and two symmetrically placed output leads. While in a two-terminal device the Lorentz force only leads to a decreased Aharonov-Bohm oscillation amplitude, in the two-output ring it produces a distinct imbalance in the electron transfer probability from the input to the two output leads. Depending on the value of the momentum of the incident electron locking or antilocking of the transfer probability extrema for both leads appears as a function of the magnetic field.

73.63.-b - Electronic transport in nanoscale materials and structures.
73.23.-b - Electronic transport in mesoscopic systems.

© EDP Sciences 2005