A simple approach to form nanocrystals embedded in amorphous high-k gate dielectric by pulsed laser ablationC. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee
School of Materials Science and Engineering, Nanyang Technological University Nanyang Avenue, Singapore 639798
received 2 December 2005; accepted in final form 7 February 2006
published online 24 February 2006
We have successfully developed a novel method to fabricate the memory structure of nanocrystals embedded in amorphous high-k dielectric using pulsed laser ablation. The mean size and aerial density of the nanocrystals are estimated to be about 9 and , respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical.
77.55.+f - Dielectric thin films.
78.40.Fy - Semiconductors.
78.67.Bf - Nanocrystals and nanoparticles.
© EDP Sciences 2006