Issue
Europhys. Lett.
Volume 74, Number 1, April 2006
Page(s) 177 - 180
Section Condensed matter: electronic structure, electrical, magnetic, and optical properties
DOI http://dx.doi.org/10.1209/epl/i2005-10505-4
Published online 24 February 2006
Europhys. Lett., 74 (1), pp. 177-180 (2006)
DOI: 10.1209/epl/i2005-10505-4

A simple approach to form $\chem{Ge}$ nanocrystals embedded in amorphous $\chem{Lu_{2}{O}_{3}}$ high-k gate dielectric by pulsed laser ablation

C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee

School of Materials Science and Engineering, Nanyang Technological University Nanyang Avenue, Singapore 639798

pslee@ntu.edu.sg

received 2 December 2005; accepted in final form 7 February 2006
published online 24 February 2006

Abstract
We have successfully developed a novel method to fabricate the memory structure of $\chem{Ge}$ nanocrystals embedded in amorphous $\chem{Lu_{2}{O}_{3}}$ high-k dielectric using pulsed laser ablation. The mean size and aerial density of the $\chem{Ge}$ nanocrystals are estimated to be about 9$\un{nm}$ and $7\times 10^{11}\un{
cm}^{-2}$, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical.

PACS
77.55.+f - Dielectric thin films.
78.40.Fy - Semiconductors.
78.67.Bf - Nanocrystals and nanoparticles.

© EDP Sciences 2006