Volume 77, Number 6, March 2007
Article Number 67001
Number of page(s) 5
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 01 March 2007
EPL, 77 (2007) 67001
DOI: 10.1209/0295-5075/77/67001

Leakage conduction mechanism of amorphous $\chem{Lu_{2}O_{3}}$ high-$\mth{k}$ dielectric films fabricated by pulsed laser ablation

C. L. Yuan, P. Darmawan, M. Y. Chan and P. S. Lee

School of Materials Science

received 6 December 2006; accepted in final form 30 January 2007; published March 2007
published online 1 March 2007

Amorphous ${\rm Lu}_{2}{\rm O}_{3}$ thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of $4\times 10^{-5}\,{\rm A/cm}^{2}$ at 1 V accumulation bias was obtained for 4.5 nm thick ${\rm Lu}_{2}{\rm O}_{3}$ thin film deposited at room temperature followed by post-deposition anneal (PDA) at $600\,^{\circ }$C in oxygen ambient. The leakage conduction mechanisms of amorphous ${\rm Lu}_{2}{\rm O}_{3}$ films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.

77.55.+f - Dielectric thin films.
72.80.Sk - Insulators .
73.40.Qv - Metal-insulator-semiconductor structures (including semiconductor-to- insulator) .

© Europhysics Letters Association 2007