Leakage conduction mechanism of amorphous high- dielectric films fabricated by pulsed laser ablationC. L. Yuan, P. Darmawan, M. Y. Chan and P. S. Lee
School of Materials Science
received 6 December 2006; accepted in final form 30 January 2007; published March 2007
published online 1 March 2007
Amorphous thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of at 1 V accumulation bias was obtained for 4.5 nm thick thin film deposited at room temperature followed by post-deposition anneal (PDA) at C in oxygen ambient. The leakage conduction mechanisms of amorphous films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.
77.55.+f - Dielectric thin films.
72.80.Sk - Insulators .
73.40.Qv - Metal-insulator-semiconductor structures (including semiconductor-to- insulator) .
© Europhysics Letters Association 2007