Issue |
Europhys. Lett.
Volume 74, Number 3, May 2006
|
|
---|---|---|
Page(s) | 526 - 532 | |
Section | Interdisciplinary physics and related areas of science and technology | |
DOI | https://doi.org/10.1209/epl/i2006-10011-3 | |
Published online | 29 March 2006 |
The evolution of magnetotransport properties with
carrier concentration in
single crystals
Hefei National Laboratory for Physical Science at Microscale and Department of Physics University of Science and Technology of China - Hefei, Anhui 230026, PRC
Corresponding author: chenxh@ustc.edu.cn
Received:
15
January
2006
Accepted:
2
March
2006
Magnetotransport properties are systematically investigated on
single crystals with different
carrier concentrations changed by oxygen content. The in-plane
resistivity decreases rapidly with increasing carrier
concentration. Large negative magnetoresistance was observed in
all the single crystals. A magnetic-field–driven sign change of
the slope in resistivity at
and a magnetic-dependent energy
gap in the range 20–
are observed in highly doped crystals, while
they are absent in the crystals with low carrier concentrations. In
addition, a thermally activated resistivity induced by magnetic
fields was observed at low temperatures below
in highly
doped crystals. It is concluded that the magnetotransport
properties are quite sensitive to the carrier concentration.
PACS: 81.40.Rs – Electrical properties (related to treatment conditions) / 75.47.-m – Magnetotransport phenomena; materials for magnetotransport / 72.15.Gd – Galvanomagnetic and other magnetotransport effects
© EDP Sciences, 2006
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