Issue |
EPL
Volume 103, Number 4, August 2013
|
|
---|---|---|
Article Number | 47006 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/103/47006 | |
Published online | 16 September 2013 |
Electronic transport and photovoltaic properties in Bi2Sr2Co2Oyepitaxial heterostructures
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, PRC
2 College of Physics Science and Technology, Hebei University - Baoding 071002, PRC
(a) swang2008@hotmail.com
(b) Kjjin@iphy.ac.cn
Received: 19 June 2013
Accepted: 21 August 2013
Epitaxial heterostructures constructed from the thermoelectric cobalt Bi2Sr2Co2Oy thin films and SrTiO3 as well as SrTi0.993Nb0.007O3 substrates were fabricated by pulsed-laser deposition. The scanning transmission electron microscopy results confirm that the heterostructures are epitaxial, with sharp and coherent interfaces. The temperature-dependent electrical transport properties and the Hall effects were systematically investigated. The Bi2Sr2Co2Oy/SrTi0.993Nb0.007O3 p-n heterostructure exhibits good rectifying current-voltage characteristics over a wide temperature range. A strong photovoltaic effect was observed in the Bi2Sr2Co2Oy/SrTi0.993Nb0.007O3 heterostructure, with the temperature-dependent photovoltage being systematically investigated. The present work shows a great potential of this new heterostructures as photoelectric devices.
PACS: 73.40.Lq – Other semiconductor-to-semiconductor contacts, / 73.40.-c – Electronic transport in interface structures / 72.40.+w – Photoconduction and photovoltaic effects
© EPLA, 2013
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