Europhys. Lett.
Volume 75, Number 4, August 2006
Page(s) 597 - 603
Section Condensed matter: electronic structure, electrical, magnetic, and optical properties
Published online 12 July 2006
Europhys. Lett., 75 (4), pp. 597-603 (2006)
DOI: 10.1209/epl/i2006-10151-4

Spin lifetimes and strain-controlled spin precession of drifting electrons in $\chem{GaAs}$

M. Beck1, C. Metzner1, S. Malzer1, 2 and G. H. Döhler1, 2

1  Institut für Technische Physik I, Universität Erlangen-Nürnberg - Erlangen, Germany
2  Max-Planck-Research-Group for Optics, Information and Photonics Universität Erlangen-Nürnberg - Erlangen, Germany

received 13 April 2006; accepted in final form 26 June 2006
published online 12 July 2006

We study the transport of spin-polarized electrons in n-GaAs using spatially resolved continuous-wave Faraday rotation. From the measured steady-state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along [110] allows us to deduce the deformation potential causing this effect, while strain along [100] has no effect. The electric-field dependence of the spin lifetime is explained quantitatively in terms of an increase of the electron temperature.

71.70.Fk - Electronic structure of bulk materials: Strain-induced splitting.
72.25.Dc - Electronic transport in condensed matter: Spin polarized transport in semiconductors.
72.25.Rb - Electronic transport in condensed matter: Spin relaxation and scattering.

© EDP Sciences 2006