Spin lifetimes and strain-controlled spin precession of drifting electrons inM. Beck1, C. Metzner1, S. Malzer1, 2 and G. H. Döhler1, 2
1 Institut für Technische Physik I, Universität Erlangen-Nürnberg - Erlangen, Germany
2 Max-Planck-Research-Group for Optics, Information and Photonics Universität Erlangen-Nürnberg - Erlangen, Germany
received 13 April 2006; accepted in final form 26 June 2006
published online 12 July 2006
We study the transport of spin-polarized electrons in n-GaAs using spatially resolved continuous-wave Faraday rotation. From the measured steady-state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along  allows us to deduce the deformation potential causing this effect, while strain along  has no effect. The electric-field dependence of the spin lifetime is explained quantitatively in terms of an increase of the electron temperature.
71.70.Fk - Electronic structure of bulk materials: Strain-induced splitting.
72.25.Dc - Electronic transport in condensed matter: Spin polarized transport in semiconductors.
72.25.Rb - Electronic transport in condensed matter: Spin relaxation and scattering.
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