Volume 104, Number 4, November 2013
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||17 December 2013|
Enhancement of electron spin lifetime in GaAs crystals: The benefits of dichotomous noise
1 Dipartimento di Fisica e Chimica, Università di Palermo and CNISM - Viale delle Scienze, edificio 18, I-90128 Palermo, Italy
2 Group of Interdisciplinary Physics, Università di Palermo - Viale delle Scienze, edificio 18, I-90128 Palermo, Italy
Received: 18 May 2013
Accepted: 21 November 2013
The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field is investigated. Two different sources of fluctuations are considered: (i) a symmetric dichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show, in both cases, an enhancement of the spin relaxation time by increasing the amplitude of the external noise. Moreover, we find that the electron spin lifetime vs. the noise correlation time: (i) increases up to a plateau in the case of dichotomous random fluctuations, and (ii) shows a nonmonotonic behaviour with a maximum in the case of bulks subjected to a Gaussian correlated noise.
PACS: 72.25.Rb – Spin relaxation and scattering / 72.70.+m – Noise processes and phenomena / 72.20.Ht – High-field and nonlinear effects
© EPLA, 2013
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