Volume 77, Number 4, February 2007
Article Number 45003
Number of page(s) 5
Section Physics of Gases, Plasmas and Electric Discharges
Published online 02 February 2007
EPL, 77 (2007) 45003
DOI: 10.1209/0295-5075/77/45003

Simulation study of SiH4 microdischarges in a narrow channel

L. Z. Tong, S. Yonemura, H. Takana and H. Nishiyama

Institute of Fluid Science, Tohoku University - 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

received 2 August 2006; accepted in final form 14 December 2006; published February 2007
published online 2 February 2007

Using the Particle-in-Cell/Monte Carlo (PIC/MC) method, the behavior of SiH4 plasma discharge in a narrow channel was studied. Simulations were carried out at a gas pressure of 5 Torr for an electrode distance of 20 mm and a narrow channel with an inner diameter of 2 mm. Most SiH2+ ions were found to be changed into SiH3+ ions due to SiH2+-SiH4 collisional charge exchange. The dominant charged species in the discharge were electrons and SiH3+ ions. The inner surface of the narrow channel greatly affected SiH4 plasma behavior due to an accumulation of charged particles. An intense ionization rate was found for the first time in the sheath on the inner surface of the narrow channel. The largest electron and SiH3+ ion densities appeared at the edge of the plasma bulk abutting the sheath on the inner surface of the narrow channel.

52.40.Hf - Plasma-material interactions; boundary layer effects.
81.15.Gh - Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.).

© Europhysics Letters Association 2007