Volume 81, Number 3, February 2008
Article Number 38003
Number of page(s) 4
Section Interdisciplinary Physics and Related Areas of Science and Technology
Published online 03 January 2008
EPL, 81 (2008) 38003
DOI: 10.1209/0295-5075/81/38003

Spin properties of 2D charge carriers in semiconductors with inverted bands

A. Dargys

Semiconductor Physics Institute - A. Gostauto 11, LT-01108 Vilnius, Lithuania

received 17 September 2007; accepted in final form 29 November 2007; published February 2008
published online 3 January 2008

This letter shows how the inversion of energy bands is reflected in spin properties of a free charge carrier in the narrow-gap semiconductor Hg1-xCdxTe. The concept of the spin surface (analogue of the Bloch sphere) is used to represent all possible spin states of a ballistic 2D carrier. It was found that the spin dynamics in HgTe/Hg1-xCdxTe quantum wells may take place on spherical, spheroidal, disk- or needle-like spin surfaces.

85.75.-d - Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields.
75.10.Hk - Classical spin models.
73.61.Ga - II-VI semiconductors.

© EPLA 2008