Volume 87, Number 5, September 2009
Article Number 57005
Number of page(s) 6
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 21 September 2009
EPL, 87 (2009) 57005
DOI: 10.1209/0295-5075/87/57005

Electron-electron scattering effect on spin relaxation in multi-valley nanostructures

M. M. Glazov and E. L. Ivchenko

Ioffe Physical-Technical Institute RAS - 194021 St.-Petersburg, Russia

received 19 June 2009; accepted in final form 19 August 2009; published September 2009
published online 21 September 2009

We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. The dependences of the spin relaxation rate on temperature, electron concentration and valley-orbit splitting are calculated and discussed. We demonstrate that in a wide range of temperatures the electron-electron collisions can govern spin relaxation in high-quality Si/SiGe quantum wells.

72.25.Rb - Spin relaxation and scattering.
71.70.Ej - Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect.

© EPLA 2009