Photoluminescence studies of SiGe quantum dot arrays prepared by templated self-assemblyC. Dais1, G. Mussler2, H. Sigg1, T. Fromherz3, V. Auzelyte1, H. H. Solak1 and D. Grützmacher2
1 Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute - 5232 Villigen-PSI, Switzerland
2 Institute of Bio- and Nanosystems, Research Center Jülich - 52425 Jülich, Germany, EU
3 Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz - 8093 Linz, Austria, EU
received 18 September 2008; accepted in final form 20 November 2008; published December 2008
published online 12 January 2009
The photoluminescence emission of SiGe quantum dot arrays prepared by templated self-assembly, combining extreme-ultraviolet interference lithography and molecular beam epitaxy, were studied. The PL spectra obtained from areas with ordered dots show a pronounced SiGe-quantum-dot–related signal. The corresponding no-phonon and assisted transversal optical phonon recombinations are well resolved due to the narrow-size distribution of the fabricated quantum dot arrays. Additionally, the dependence of the photoluminescence emission on dot size and Ge concentration is discussed as well as effects of laser power excitation.
78.67.Hc - Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures: Quantum dots.
81.07.Ta - Nanoscale materials and structures: fabrication and characterization: Quantum dots.
81.16.Rf - Nanoscale pattern formation.
© EPLA 2008