Volume 85, Number 6, March 2009
Article Number 67004
Number of page(s) 6
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 06 April 2009
EPL, 85 (2009) 67004
DOI: 10.1209/0295-5075/85/67004

Spin Hall effect in IV-VI semiconductors

A. Dyrdał1, V. K. Dugaev2, 3 and J. Barnaś1, 4

1   Department of Physics, A. Mickiewicz University - ul. Umultowska 85, 61-614 Poznań, Poland, EU
2   Department of Physics, Rzeszów University of Technology - al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland, EU
3   Department of Physics and CFIF, Instituto Superior Técnico, TU Lisbon - Av. Rovisco Pais, 1049-001 Lisbon, Portugal, EU
4   Institute of Molecular Physics, Polish Academy of Sciences - ul. Smoluchowskiego 17, 60-179 Poznań, Poland, EU

received 27 November 2008; accepted in final form 26 February 2009; published March 2009
published online 6 April 2009

In the framework of the Dimmock model of the energy spectrum in IV-VI narrow-gap semiconductors (like PbTe, SnTe, and their alloys), we calculate the intrinsic contribution to spin Hall conductivity. The calculations show that a strong spin-orbit interaction in these compounds leads to a nonvanishing spin Hall effect. Moreover, this effect is associated with kinetic terms which describe the deviation of the Dimmock model from a simpler model of Dirac. The nonzero spin Hall conductivity, however, occurs only when the effective mass of electrons in the conduction band is different from the effective mass of holes in the valence band.

72.25.Dc - Spin polarized transport in semiconductors.
72.20.My - Galvanomagnetic and other magnetotransport effects.
71.20.Nr - Semiconductor compounds.

© EPLA 2009