Issue
EPL
Volume 86, Number 2, April 2009
Article Number 26005
Number of page(s) 5
Section Condensed Matter: Structural, Mechanical and Thermal Properties
DOI http://dx.doi.org/10.1209/0295-5075/86/26005
Published online 04 May 2009
EPL, 86 (2009) 26005
DOI: 10.1209/0295-5075/86/26005

Quantitative dopant contrast in the helium ion microscope

M. A. E. Jepson1, B. J. Inkson1, Xiong Liu2, L. Scipioni3 and C. Rodenburg1

1   The Department of Engineering Materials, The University of Sheffield - Sheffield, South Yorkshire, S1 3JD, UK, EU
2   Carl Zeiss NTS - Carl-Zeiss-Straße 56, 73447, Oberkochen, Germany, EU
3   Carl Zeiss SMT Inc, ALIS Business Unit - 1 Corp Way, Peabody, MA 01960 USA

m.jepson@sheffield.ac.uk

received 23 February 2009; accepted in final form 30 March 2009; published April 2009
published online 4 May 2009

Abstract
As semiconductor devices shrink in size, the challenge of characterisation of their dopant distributions intensifies. Scanning electron microscopy (SEM) has been proposed as a suitable technique to overcome this challenge. However, current low-voltage (LV) SEMs are incapable of the probe sizes required for nano-scale dopant mapping, but the recently commercialised helium ion microscope (HeIM) is capable of probe sizes of 0.25 nm; a significant improvement over LVSEM. This paper discusses the dopant contrast mechanism in the HeIM and is the first demonstration of nano-scale, quantitative dopant mapping in the HeIM.

PACS
68.37.Vj - Field emission and field-ion microscopy.
68.37.Hk - Scanning electron microscopy (SEM) (including EBIC).
61.72.uf - Ge and Si.

© EPLA 2009