Direct observation of the class-B to class-A transition in the dynamical behavior of a semiconductor laserG. Baili1, M. Alouini1, 2, T. Malherbe1, D. Dolfi1, I. Sagnes3 and F. Bretenaker4
1 Thales Research & Technology France - RD 128, 91767 Palaiseau Cedex, France, EU
2 Institut de Physique de Rennes, CNRS-Université de Rennes I - 35042 Rennes Cedex, France, EU
3 Laboratoire de Photonique et de Nanostructures, CNRS - 91460 Marcoussis, France, EU
4 Laboratoire Aimé Cotton, CNRS-Université Paris Sud 11 - 91405 Orsay Cedex, France, EU
received 3 July 2009; accepted in final form 14 August 2009; published August 2009
published online 15 September 2009
The transition between the class-B and class-A dynamical behaviors of a semiconductor laser is directly observed by continuously controlling the lifetime of the photons in a cavity of sub-millimetric to centimetric length. It is experimentally and theoretically proved that the transition from a resonant to an overdamped behavior occurs progressively, without any discontinuity. In particular, the intermediate regime is found to exhibit features typical from both the class-A and class-B regimes. The laser intensity noise is proved to be a powerful probe of the laser dynamical behavior.
42.55.Ah - General laser theory.
42.60.Mi - Dynamical laser instabilities; noisy laser behavior.
05.40.Ca - Noise.
© EPLA 2009