Backward diode behavior in oxygen-excessive manganite-titanate p-n junctionY. W. Xie1, J. R. Sun2, D. F. Guo1, B. G. Shen2 and X. Y. Zhang1
1 State Key Laboratory of Metastable Materials Science and Technology, Yanshan University 066004, Qinhuangdao, PRC
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100080, PRC
received 15 June 2009; accepted in final form 26 August 2009; published September 2009
published online 22 September 2009
Junctions composed of La0.9Ca0.1MnO3 film and 1 wt% Nb-doped SrTiO3 substrate were fabricated using pulsed-laser deposition technique. Several junctions were annealed in O2 flow at 900 °C for 10 hours. Studies on the current-voltage characteristics of these junctions showed that the annealed junctions exhibit strong backward diode behavior that takes place for small bias (within 1.05 V) and gradually vanishes with increasing temperature up to 50 K. As a comparison, no backward diode behavior was observed in the unannealed junctions. The depression of leakage current is believed to be responsible for the backward diode behavior in the present junctions.
75.47.Lx - Manganites.
73.40.Lq - Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.
75.70.Cn - Magnetic properties of interfaces (multilayers, superlattices, heterostructures).
© EPLA 2009