Volume 87, Number 5, September 2009
Article Number 57006
Number of page(s) 5
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 22 September 2009
EPL, 87 (2009) 57006
DOI: 10.1209/0295-5075/87/57006

Backward diode behavior in oxygen-excessive manganite-titanate p-n junction

Y. W. Xie1, J. R. Sun2, D. F. Guo1, B. G. Shen2 and X. Y. Zhang1

1   State Key Laboratory of Metastable Materials Science and Technology, Yanshan University 066004, Qinhuangdao, PRC
2   Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100080, PRC

received 15 June 2009; accepted in final form 26 August 2009; published September 2009
published online 22 September 2009

Junctions composed of La0.9Ca0.1MnO3 film and 1 wt% Nb-doped SrTiO3 substrate were fabricated using pulsed-laser deposition technique. Several junctions were annealed in O2 flow at 900 °C for 10 hours. Studies on the current-voltage characteristics of these junctions showed that the annealed junctions exhibit strong backward diode behavior that takes place for small bias (within $\pm$ 1.05 V) and gradually vanishes with increasing temperature up to 50 K. As a comparison, no backward diode behavior was observed in the unannealed junctions. The depression of leakage current is believed to be responsible for the backward diode behavior in the present junctions.

75.47.Lx - Manganites.
73.40.Lq - Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.
75.70.Cn - Magnetic properties of interfaces (multilayers, superlattices, heterostructures).

© EPLA 2009