Volume 88, Number 5, December 2009
Article Number 57006
Number of page(s) 6
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 10 December 2009
EPL, 88 (2009) 57006
DOI: 10.1209/0295-5075/88/57006

Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon

M. Trezza1, C. Cirillo1, S. L. Prischepa2 and C. Attanasio1, 3

1   Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica “E. R. Caianiello”, Università degli Studi di Salerno - Baronissi, (Sa) I-84081, Italy, EU
2   State University of Informatics and RadioElectronics - P. Brovka street 6, Minsk 220013, Belarus
3   NANO_MATES, Research Centre for NANOMAterials and nanoTEchnology at Salerno University, Università degli Studi di Salerno - Fisciano, (Sa) I-84084, Italy, EU

received 28 July 2009; accepted in final form 10 November 2009; published December 2009
published online 10 December 2009

Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with period of the order of ten nanometers. Bumps in the dR/dH-vs.-H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.

74.25.Fy - Transport properties (electric and thermal conductivity, thermoelectric effects, etc.).
74.25.Qt - Vortex lattices, flux pinning, flux creep.
81.05.Rm - Porous materials; granular materials.

© EPLA 2009