Effect of Ce and Zr codoping on the multiferroic properties of BiFeO3 thin films
Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University Wuhan 430072, PRC Key Laboratory of Acoustic and Photonic Material and Device of the Ministry of Education, Wuhan University Wuhan 430072, PRC
Corresponding author: email@example.com
Accepted: 17 February 2010
Pure BiFeO3(BFO), Ce-doped BiFeO3(BCFO), Zr-doped BiFeO3(BFZO), as well as Ce- and Zr-codoped BiFeO3(BCFZO) thin films were successfully prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition. The effects of Ce and Zr doping on the structure, surface morphology, electrical and magnetic properties of BFO films were studied. X-ray diffraction and atomic force microscopy analysis revealed structure transition and decreased grain sizes in the doped BFO films. In comparison with the other doped BFO films studied here, the Ce- and Zr-codoped BCFZO film showed the lowest dielectric loss and leakage current density and exhibited a well-squared hysteresis loop with a remanent polarization Pr of 64 μC/cm2 and a coercive electric field Ec of 339 kV/cm, as well as the fatigue-free characteristics. Meanwhile, the largest magnetization was also observed in this codoped film. The possible reasons for the enhancement of the ferroelectricity and the ferromagnetism of these films were discussed.
PACS: 77.80.-e – Ferroelectricity and antiferroelectricity
© EPLA, 2010