Volume 96, Number 1, October 2011
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||16 September 2011|
Photo-resistance and photo-voltage in epitaxial BiFeO3 thin films
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China
Accepted: 18 August 2011
The photo-resistance and photo-voltage of the heterostructures of BiFeO3 (BFO) films grown on Nb-doped SrTiO3 (SNTO) substrates by laser molecular-beam epitaxy irradiated by UV light are systematically studied. The I-V measurements on the Au/BiFeO3/Nb-doped-SrTiO3 heterostructures show a good rectifying property with the maximum rectifying ratio of 3.5×103. It was observed that the photo-resistance and photo-voltage change with the intensity of laser and the thickness of BFO films, respectively. We conclude that the potential barrier at the BFO/SNTO interface and that at the Au/BFO interface are both responsible for the rectification and photo-electric characteristics.
PACS: 73.50.Pz – Photoconduction and photovoltaic effects / 73.40.Ei – Rectification / 81.15.Fg – Pulsed laser ablation deposition
© EPLA, 2011
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