Volume 34, Number 4, May I 1996
|Page(s)||275 - 280|
|Section||Condensed matter: structure, thermal and mechanical properties|
|Published online||01 September 2002|
High-temperature metallization of the Ge(111) surface detected by photoemission spectroscopy
ENEA-INN, Settore Nuovi Materiali - C.P. 2400, I-00100 Roma, Italy
2 IRC, Liverpool University - P.O. Box 147, Liverpool 169 3BX, UK
3 Laboratorio TASC-INFM - Padriciano 99, I-34012 Trieste, Italy
4 Dipartimento di Fisica, Università di Trieste - Via Valerio 2, I-34100 Trieste, Italy
Accepted: 12 March 1996
The 3d core levels and the valence band of Ge(111) have been studied by photoemission as a function of temperature up to 1200 K. Evidence of a phase transition is found between 1020 K and 1085 K from core level analysis. For the data can be interpreted consistently with an incomplete surface melting scenario. A finite density of states at the Fermi level indicates a metallic surface layer above this phase transition. About 0.7–1 atomic bilayer is estimated to undergo the semiconductor-to-metal transition.
PACS: 68.35.Rh – Phase transitions and critical phenomena / 73.20.At – Surface states, band structure, electron density of states
© EDP Sciences, 1996
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