Volume 37, Number 2, January II 1997
|Page(s)||127 - 132|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Spin-orbit–assisted variable-range hopping in strong magnetic fields
Physics Department, Ben Gurion University - Beer Sheva 84105, Israel
2 NEC Research Institute - 4 Independence Way, Princeton, NJ 08540
Accepted: 22 November 1996
It is shown that in the presence of strong magnetic fields, spin-orbit scattering causes a sharp increase in the effective density of states in the variable-range hopping regime when temperature decreases. This effect leads to an exponential enhancement of the conductance above its value without spin-orbit scattering. Thus an experimental study of the hopping conductivity in a fixed, large magnetic field, is a sensitive tool to explore the spin-orbit scattering parameters in the strongly localized regime.
PACS: 72.20.My – Galvanomagnetic and other magnetotransport effects / 72.20.-i – Conductivity phenomena in semiconductors and insulators / 73.50.Jt – Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
© EDP Sciences, 1997
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