Volume 37, Number 2, January II 1997
|Page(s)||133 - 138|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Soft–X-ray fluorescence of porous silicon: electronic structure of Si nanostructures
Institut für Festkörperforschung,
Jülich, D-52425 Jülich, Germany
2 Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1, Canada
3 Department of Electrical Engineering, University of British Columbia, Vancouver, BC, V6T 1Z1, Canada
Accepted: 29 November 1996
The electronic structure of porous Si is investigated using soft–X-ray fluorescence spectroscopy. Significant changes are observed as compared to bulk Si, which we interpret as due to altered electronic structure in the Si nanostructures. By imposing standing wave boundary conditions on the valence band wave functions, we calculate the fluorescence spectrum for thin Si sheets of different orientations. For a (100)-oriented sheet, the calculation is in good agreement with the experimental spectra, suggesting that the nanostructure in porous Si is predominantly in the form of thin Si (100)-type sheets.
PACS: 73.20.Dx – Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) / 71.20.Mq – Elemental semiconductors / 71.20.-b – Electron density of states
© EDP Sciences, 1997
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