| Issue |
Europhys. Lett.
Volume 37, Number 5, February II 1997
|
|
|---|---|---|
| Page(s) | 353 - 358 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1997-00156-5 | |
| Published online | 01 September 2002 | |
The influence of a low-impedance environment on transport in a NSS-transistor
Technische Universität Dresden, Institut für Theoretische Physik, Mommsenstr. 13, D-01062 Dresden, Germany
Received:
11
July
1996
Accepted:
10
January
1997
We analyze the current through a small NSS-transistor
due to Andreev reflections in the NS-junction with respect to finite
temperatures and the electromagnetic environment of the transistor. We show that
a typical low-impedance environment strongly modifies the nonlinear
I-V characteristics measured by the differential conductance 
.
PACS: 74.50.+r – Proximity effects, weak links, tunneling phenomena, and Josephson effects / 72.10.Bg – General formulation of transport theory / 05.40.+j – Fluctuation phenomena, random processes and Brownian motion
© EDP Sciences, 1997
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