Volume 37, Number 5, February II 1997
|Page(s)||353 - 358|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
The influence of a low-impedance environment on transport in a NSS-transistor
Technische Universität Dresden, Institut für Theoretische Physik, Mommsenstr. 13, D-01062 Dresden, Germany
Accepted: 10 January 1997
We analyze the current through a small NSS-transistor due to Andreev reflections in the NS-junction with respect to finite temperatures and the electromagnetic environment of the transistor. We show that a typical low-impedance environment strongly modifies the nonlinear I-V characteristics measured by the differential conductance .
PACS: 74.50.+r – Proximity effects, weak links, tunneling phenomena, and Josephson effects / 72.10.Bg – General formulation of transport theory / 05.40.+j – Fluctuation phenomena, random processes and Brownian motion
© EDP Sciences, 1997
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