Issue |
Europhys. Lett.
Volume 37, Number 5, February II 1997
|
|
---|---|---|
Page(s) | 365 - 370 | |
Section | Cross-disciplinary physics and related areas of science and technology | |
DOI | https://doi.org/10.1209/epl/i1997-00158-3 | |
Published online | 01 September 2002 |
Kinetics of Cr2O3 growth during the oxidation of Cr(110)
Fakultät für Physik und Astronomie, Institut für Experimentalphysik/Festkörperphysik, Ruhr-Universität Bochum - D 44780 Bochum, Germany
Received:
18
September
1996
Accepted:
10
January
1997
We have studied the oxidation of single crystalline Cr(110) films
prepared by molecular beam epitaxy (MBE) in the temperature range from
400 K to 700 K. Epitaxial α- layers in
[0001] orientation are formed over the whole temperature range.
We monitor the oxidation
by X-ray reflectivity measurements providing information on the oxide
layer
thickness, its defect density and the roughness of the oxide
surface
and the metal/oxide interface for different times and temperatures.
After a rapid increase of the oxide thickness in the early
growth stage, we observe a saturation of the oxide thickness.
This saturation thickness
depends markedly on the oxidation temperature, indicative for an
oxidation process which is controlled by the
Cr-ion diffusion. The activation energy for
the cation diffusion is determined to be 1.4 eV, which is smaller
by a factor of two as compared to the
value found for bulk interstitial diffusion.
PACS: 81.65.Mq – Surface treatments: oxidation / 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy / 61.10.-i – X-ray diffraction and scattering
© EDP Sciences, 1997
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