| Issue |
Europhys. Lett.
Volume 39, Number 1, July I 1997
|
|
|---|---|---|
| Page(s) | 61 - 66 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1997-00314-9 | |
| Published online | 01 September 2002 | |
Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001)
Groupe de Physique des Etats Condensés, URA CNRS 783,
Faculté des Sciences de Luminy, case 901 -
F-13288 Marseille Cédex 9, France
Received:
24
February
1997
Accepted:
30
May
1997
Applying k-resolved inverse photoemission (KRIPES) to the 
-reconstructed 6H-SiC(0001) face, we have observed a sharp
surface state U located at 
above the Fermi level at the
centre of the surface Brillouin zone. Its bandwidth of 
is in good agreement with the 0.35 eV predicted by first-principle calculations
based on a Si-adatom model. However, LDA calculations predict a half-filled
state and a metallic character for this reconstruction. Together with
recent ARUPS data, our results reveal that the one-electron band is split
into two bands, giving a semiconducting surface with a reduced indirect bandgap
around 2.0 eV at the 
point. Many-body correlation effects may give rise,
in the limit of strong localization, to this bandgap opening.
PACS: 73.20.At – Surface states, band structure, electron density of states / 71.30.+h – Metal-insulator transitions and other electronic transitions
© EDP Sciences, 1997
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