Issue |
Europhys. Lett.
Volume 39, Number 1, July I 1997
|
|
---|---|---|
Page(s) | 61 - 66 | |
Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
DOI | https://doi.org/10.1209/epl/i1997-00314-9 | |
Published online | 01 September 2002 |
Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001)
Groupe de Physique des Etats Condensés, URA CNRS 783,
Faculté des Sciences de Luminy, case 901 -
F-13288 Marseille Cédex 9, France
Received:
24
February
1997
Accepted:
30
May
1997
Applying k-resolved inverse photoemission (KRIPES) to the
-reconstructed 6H-SiC(0001) face, we have observed a sharp
surface state U located at
above the Fermi level at the
centre of the surface Brillouin zone. Its bandwidth of
is in good agreement with the 0.35 eV predicted by first-principle calculations
based on a Si-adatom model. However, LDA calculations predict a half-filled
state and a metallic character for this reconstruction. Together with
recent ARUPS data, our results reveal that the one-electron band
is split
into two bands, giving a semiconducting surface with a reduced indirect bandgap
around 2.0 eV at the
point. Many-body correlation effects may give rise,
in the limit of strong localization, to this bandgap opening.
PACS: 73.20.At – Surface states, band structure, electron density of states / 71.30.+h – Metal-insulator transitions and other electronic transitions
© EDP Sciences, 1997
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.