| Issue |
Europhys. Lett.
Volume 39, Number 1, July I 1997
|
|
|---|---|---|
| Page(s) | 97 - 102 | |
| Section | Cross-disciplinary physics and related areas of science and technology | |
| DOI | https://doi.org/10.1209/epl/i1997-00320-5 | |
| Published online | 01 September 2002 | |
From periodic monomolecular step array to macrosteps in pure and Si-doped MBE-grown GaAs on vicinal (001) surfaces
Laboratoire de Microstructures et de Microélectronique
(L2M), CNRS, B.P. 107, 92225 Bagneux Cedex, France
Received:
21
February
1997
Accepted:
15
May
1997
Steps and terraces on GaAs (001) vicinal surfaces misoriented
towards (111) or 
are studied after MBE growth for
a large range of misorientation angle (
to 
)
using ex situ contact mode AFM. The terrace width distribution
and correlation length are well explained by thermodynamical
equilibrium of interacting steps. The step-step interaction is much
larger than in elemental materials and is dominated by dipole rather
than elastic interaction. Step bunching is never observed on clean
surfaces for any misorientation. However, for Si-doped layers, the
surface disorder increases and formation of macrosteps occurs at very
high doping.
PACS: 81.15.Np – Solid phase epitaxy; growth from solid phases / 68.35.Bs – Surface structure and topography / 61.16.Ch – Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc
© EDP Sciences, 1997
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